More efficient, industrial-qualified MOSFETs

7 May 2003 Power Electronics / Power Management

International Rectifier's IRF8010 series HEXFET power MOSFETs are claimed to have as much as 10% lower on-resistance, or RDS(on) than previous devices. The new 80 A devices have high current density and low on-resistance (12 mΩ typical) for maximum system efficiency.

These MOSFETs are rated for repetitive and single pulse avalanche energy, EAR and EAS, up to 175°C. In addition, the new MOSFETs feature minimised input capacitance and gate charge to simplify gate driver circuits and cost while improving switching performance at the same time. The performance characteristics make the new IRF8010 MOSFETs ideal primary switches in isolated topology, high-efficiency UPS and DC-DC converters.

The devices are industrial qualified and fully characterised in thermal resistance for end of life conditions in highly demanding power and thermal cycling, typically found in motor control applications, such as forklifts, DC choppers and battery-operated vehicles. The thermal characterisation enables designers to establish proper guard-bands and targets for final products that must operate in long-term stress and harsh power cycling conditions, for improved reliability.

For more information contact Avnet Kopp, 011 809 6100, [email protected], www.avnet.co.za

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