AMD has built a Complementary Metal Oxide Semiconductor (CMOS) transistor that it claims achieves the fastest switching speeds yet reported in the semiconductor industry. The company has developed a device with a 15-nanometer gate length (0,015 µm), a prototype for the transistors that it plans to use to power future generations of microprocessors.
AMD says its latest milestone heralds the capability for a 20-fold increase in the number of transistors per chip and a 10-fold increase in microprocessor performance by the end of the decade. The company presented its research at the December 2001 International Electron Devices Meeting (IEDM).
AMD's 15 nm device is a prototype that is key to the development of AMD's 30-nanometer process generation, which the company plans to have in production by approximately 2009. On AMD's roadmap, the 30 nm technology will make use of 300 mm wafers. The 15 nm transistor is a CMOS-based, 0,8 V device, designed to handle switching speeds of 0,3 ps, or 3,33 trillion switches per second.
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