The new W71NW20KK1KW from Winbond, which combines robust single level cell (SLC) NAND Flash and high-speed, low-power LPDDR4x memory, provides sufficient memory capacity for 5G cellular modems that are intended for use as customer premises equipment (CPE) in homes and offices.
While mobile 5G modems typically require larger memory densities, static 5G CPE modems can operate effectively with memory capacities of 2 Gb NAND or DRAM. By offering this memory combination in a compact single package, the W71NW20KK1KW enables 5G modem manufacturers to meet the system requirements of CPE units at low materials and production costs.
The chip is a 149-ball ball grid array (BGA) package consisting of a 2 Gb SLC NAND Flash die and a 2 Gb LPDDR4x DRAM die. The robust SLC NAND Flash offers enhanced endurance specifications and high data integrity. It only requires 4-bit ECC to achieve high data integrity, but the device’s 2 KB + 128 B page size provides enough space for the use of 8-bit ECC.
The W71NW20KK1KW has an 8-bit bus, and is organised in blocks of 64 pages. The NAND die’s performance specifications include a maximum page read time of 25 µs and a typical page program time of 250 µs.
The LPDDR4x DRAM die, which operates at a high frequency of 1866 MHz, provides an LVSTL_11 interface and features eight internal banks for concurrent operation. It offers a data rate of up to 4267 MT/s, supporting the fast data transfer rates to be offered by 5G cellular networks.
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