ROHM Semiconductor recently announced the availability of a new 1700 V SiC (silicon carbide) MOSFET optimised for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters.
In the majority of auxiliary power supplies which are used to provide drive voltages for power supply circuits, control ICs and various supplementary systems, high breakdown (1000 V+) silicon MOSFETs are normally utilised. However, these high-voltage MOSFETs suffer from large conduction loss (often leading to excessive heat generation) and present problems related to mounting area and the number of external components, making it difficult to reduce system size. In response, ROHM developed low-loss SiC MOSFETs and control ICs that maximise performance while contributing to end-product miniaturisation.
The SCT2H12NZ provides the high breakdown voltage (1700 V) required for auxiliary power supplies in industrial equipment. With on-resistance of just 1,15 Ω, the device can be combined with an AC-DC converter control IC designed specifically for SiC MOSFET drive (BD7682FJ-LB) for improved efficiency. The SCT2H12NZ comes in a compact TO-3PFM package that maintains the creepage distance required by industrial equipment.
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