NXP Semiconductors introduced what it claims as the most powerful RF transistor in any technology operating at any frequency. Designed to deliver 1,50 kW CW at 50 V, the MRF1K50H can reduce the number of transistors in high-power RF amplifiers, which decreases amplifier size and bill of materials. The MRF1K50H operates up to 500 MHz for a broad range of applications from laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.
Like all rugged LDMOS transistors, it is expected to survive a VSWR of 65:1 but can absorb 50% more energy than its predecessor, the 1,25 kW MRFE6VP61K25H. This level of ruggedness increases reliability, which makes the transistor an excellent alternative to vacuum tubes.
The transistor is housed in a standard air cavity ceramic package, and is impedance compatible with existing high-power transistors on the market today: it can simply be dropped into existing systems, without the need to redesign the printed circuit board (PCB), requiring only light retuning.
Even greater reliability can be achieved with the over-moulded plastic version of the transistor – the MRF1K50N – which reduces the thermal resistance by 30% compared to the MRF1K50H. Specifications for both versions include efficiency of 80% at 100 MHz, gain of 23,5 dB, and minimum breakdown voltage of 135 V.
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