M/A-COM Technology Solutions has developed a gallium nitride (GaN) bias controller and sequencer for fixed and pulsed negative gate biasing.
The MABC-001000-DP000L provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). It also provides bias sequencing, ensuring that the pulsed drain voltage cannot be applied to a DUT unless the negative gate bias voltage is present. The module solution offers protection and dynamic control of all M/A-COM’s high-power transistors. It consists of two functional elements arranged vertically on the customer’s board to conserve size, weight and cost.
The first functional element, referred to as Module 1, is patterned and populated directly onto the customer board. The second functional element, referred to as Module 2, uses the land pattern of Module 1 and interconnects vertically through Module 1. The primary function of Module 1 is drain switching, while the main function of Module 2 is to provide the customer with easy gate switching.
The device is capable of robust GaN protection at any power up/power down sequence and has a target total switch transition time of ≤500 ns. It features an open drain output current below 200 mA for an external MOSFET switch drive, gate bias output current of ≤50 mA for heavy RF compression, and an internal thermistor or external temperature sensor voltage for gate bias sum.
The recommended approach is to utilise both module functions. The device can be co-located in heavy EMI/RFI environments with little or no extra filtering. Additional features include optional remote temperature sensing and temperature, fast gate switching, remote gate adjust and buffered multi-gate bias.
With 30 dB typical EMI/RFI rejection at all I/O ports, the MABC-001000-DP000L is RoHS compliant and 260°C reflow compatible. It can also be installed onto an MABC-001000-PB1PPR evaluation board for evaluation, test and characterisation purposes.
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