Vishay has introduced the industry’s first 150 V n-channel MOSFET in the compact, thermally enhanced PowerPAK SC-70 package. With a 2 x 2 mm footprint, the SiA446DJ is designed to increase efficiency by reducing conduction and switching losses in a wide range of space-constrained applications.
The device is optimised for primary-side switching in isolated DC/DC converters, boost converters in LED backlighting, and synchronous rectification and load switching for power management applications in Power over Ethernet (PoE) PD switches, telecom DC/DC bricks and portable electronic devices. For these applications, the PowerPAK SC-70 is 55% smaller than the 3 x 2,8 mm TSOP-6 package while offering 40% lower thermal resistance.
Built on ThunderFET technology, the SiA446DJ offers low maximum on-resistance of 177 m at 10 V, 185 m at 7,5 V, and 250 m at 6 V. At 10 V, the device’s on-resistance is 53% lower than the previous-generation device in the TSOP-6 package, while its typical on-resistance times gate charge figure of merit at 10 V is 54% lower for improved efficiency.
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