Vishay’s new SiA433EDJ is a 20 V p-channel power MOSFET with low on-resistance in the compact 2 by 2 mm footprint area of the thermally enhanced PowerPAK SC-70. The device is the newest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon.
The SiA433EDJ offers an ultra-low on-resistance of 18 m at 4,5 V, 26 m at 2,5 V, and 65 m at 1,8 V. It can be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise or over-voltages, while providing safer designs in applications with smaller input voltages. The MOSFET will be used as load, battery and charging switches in handheld devices. To reduce field failures due to ESD, the device features a built-in Zener diode for ESD protection up to 1800 V. The MOSFET is halogen free in accordance with IEC 61249-2-21, compliant to RoHS Directive 2002/95/EC and is 100% Rg-tested.
For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com,
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